Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/234535
Title: An analytical study of high power schottky barrier diode on 4H silicon carbide SiC wafers
Researcher: Talwar, Rajneesh
Guide(s): Chatterjee, A. K.
Keywords: 4H-SiC
Engineering and Technology,Engineering,Engineering Electrical and Electronic
Linear Graded Doping
Power Device
Schottky Barrier Diode
Silicon Carbide
University: Thapar Institute of Engineering and Technology
Completed Date: 2010
Pagination: xviii, 105p.
URI: http://hdl.handle.net/10603/234535
Appears in Departments:Department of Electronics and Communication Engineering

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file9(chapter 6).pdf224.96 kBAdobe PDFView/Open


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