Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/202717
Title: Numerical Simulation of Transport Processes during Growth of Single Crystal using Czochralski Crystal Growth Technique
Researcher: Mitesh Shamji Vegad
Guide(s): N M Bhatt
Keywords: Simulation, Czochralski method, melt flow, oxygen concentration, magnetic field, zero Gauss plane.
University: Gujarat Technological University
Completed Date: 2018-04-19
Abstract: newline quotSemiconductor revolution that forms the backbone of present day technological develop- newlinements is based on ability of mankind to grow large diameter semiconductor crystal having newlinedesired distribution and concentration of different chemical species, in an industrial scale newlinesetup. Oxygen species concentration and its radial distribution along the length of silicon newlinecrystal is one of the key parameter that dictate the use of a crystal for making a semiconduc- newlinetor based device for a required application. The ever increasing demand of higher processing newlinepower has lead to consistent increase in size of silicon crystal grown leading to present day newlinesilicon crystal of 450 mm diameter. newlineMajor chunk of the semiconductor device rely on silicon crystal that are grown using the newlineCzochralski (CZ) technique. The Czochralski method essentially consists of solidification of newlineliquid melt filled inside a crucible, onto a seed crystal attached to a pull rod. Both, the crystal newlineas well as crucible are rotated in opposite direction while the solid crystal is gradually pulled newlineout resulting in drop of melt height inside the crucible. The crucible and crystal are housed newlineinside a closed container with inert gas used as purging medium in space above the free melt newlinesurface. An external magnetic field is imposed to control the melt motion inside the crucible newlinevia the action of Lorentz force. newlineExperimental investigation of Czochralski process presents unique challenges owing to newlinehigh melt temperature and space constraint inside the crystal growth setup. Flow field mea- newlinesurement at temperature as high as 1685 K makes the experimental investigation even dif- newlineficult. Hence, numerical simulation is still the industry norm for investigation of different newlineaspects related of growth of crystal using Czochralski method. In fact, dedicated commer- newlinecial software like Crystal Growth Simulator (CGSim) are available that deal specifically with newlinesimulation of crystal growth using Czochralski method. newlineA numerical simulation approach has been adopted to simulate
Pagination: 13.6MB
URI: http://hdl.handle.net/10603/202717
Appears in Departments:Mechanical Engineering

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02_declaration.pdf24.88 kBAdobe PDFView/Open
03_certificate.pdf24.4 kBAdobe PDFView/Open
04_originality_report.pdf33.46 kBAdobe PDFView/Open
05_phd_license.pdf29.87 kBAdobe PDFView/Open
06_thesis_approval_form.pdf42.55 kBAdobe PDFView/Open
07_acknowledgment.pdf24.5 kBAdobe PDFView/Open
08_abstract.pdf55.28 kBAdobe PDFView/Open
09_content.pdf49.15 kBAdobe PDFView/Open
10_list_of_figures.pdf59.63 kBAdobe PDFView/Open
11_list_of_table.pdf40.77 kBAdobe PDFView/Open
12_abbreviations.pdf69.22 kBAdobe PDFView/Open
13_chapter_1.pdf624.29 kBAdobe PDFView/Open
14_chapter_2.pdf882.54 kBAdobe PDFView/Open
15_chapter_3.pdf621.82 kBAdobe PDFView/Open
16_chapter_4.pdf1.29 MBAdobe PDFView/Open
17_chapter_5.pdf2.98 MBAdobe PDFView/Open
17_references.pdf65.29 kBAdobe PDFView/Open
18_conclusion.pdf33.68 kBAdobe PDFView/Open
19_scope_of_future_work.pdf22.85 kBAdobe PDFView/Open


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