Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/162926
Title: Semiconductor Ring Laser Gyroscopes Modeling Design and Critical Performance Limiting Parameters
Researcher: Arpit Khandelwal
Guide(s): Azeemuddin Syed
Keywords: angle random walk
lock-in
null shift
quantum limit
scale factor stability
Semiconductor ring laser gyroscope
University: International Institute of Information Technology, Hyderabad
Completed Date: 22/06/2017
Abstract: In this thesis, SRLG has been mathematically modeled using rate equations of newlinecounter-traveling electric fields inside the gain medium and the resonant cavity. The Sagnac newlinebeat signal obtained by simulating the model is verified by rotating the experimental setup of newlinethe gyro. The sensitivity, which is found to be limited by locking of the counter-traveling newlinefields, is enhanced by proposing few novel designs and biasing techniques. Although these newlinetechniques improve the sensitivity of SRLG, the overall performance is still very poor newlinecompared to the military navigation standards. In order to identify the critical performance newlinelimiting parameters and phenomena, every metric of SRLG such as quantum limit, angle newlinerandom walk, scale factor stability, null shift and lock-in threshold have been thoroughly newlinemodeled in terms of material, geometry and environmental parameters. Moreover, effects of newlinenonlinearities such as spatial hole burning, mode coupling, gain saturation etc. on the SRLG newlinesensitivity have been evaluated. The critical performance affecting parameters are identified newlineand optimized to achieve best possible performance. For integrated SRLG, lock-in due to newlinenonlinear backscattering inside the semiconductor gain medium is found to limit the newlinesensitivity to 10 8 deg/h. Use of external coupled-cavity semiconductor ring lasers and newlinestimulated Brillouin scattering (SBS) based ring lasers as gyroscopes are proposed for high newlineperformance military applications.
Pagination: xiv,98
URI: http://hdl.handle.net/10603/162926
Appears in Departments:Department of Electronic and Communication Engineering

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01_title.pdfAttached File47.14 kBAdobe PDFView/Open
02_certificate.pdf21.83 kBAdobe PDFView/Open
03_acknowledgement.pdf25.28 kBAdobe PDFView/Open
04_contents.pdf90.31 kBAdobe PDFView/Open
05_list of figures.pdf110.26 kBAdobe PDFView/Open
06_list of tables.pdf39.49 kBAdobe PDFView/Open
07_chapter 1.pdf591.2 kBAdobe PDFView/Open
08_chapter 2.pdf337.31 kBAdobe PDFView/Open
09_chapter 3.pdf1.52 MBAdobe PDFView/Open
10_chapter 4.pdf1.07 MBAdobe PDFView/Open
11_chapter 5.pdf1.06 MBAdobe PDFView/Open
12_chapter 6.pdf105.86 kBAdobe PDFView/Open
13_appendix.pdf196.2 kBAdobe PDFView/Open
14_publications.pdf81.37 kBAdobe PDFView/Open
15_references.pdf99.09 kBAdobe PDFView/Open


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