Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/149874
Title: Growth and characterization of InBi1 xSbx InBi1 xTex and and#947; In2Se3 crystals
Researcher: Ajayakumar, C J
Guide(s): A G, Kunjomana
Keywords: band gap,
closed tube sublimation,
Horizontal directional solidification,
irradiation,
University: CHRIST University
Completed Date: 27-4-2017
Abstract: Theory and innovating practices of crystal growth heralded cutting edge breakthroughs in the production of proficient crystals towards the advancement of science and technology. Unique characteristics and band structure provide great flexibility for structural design and band gap engineering of indium bismuthide (InBi) compounds. Substitution of antimony and tellurium elements results in the transition of InBi to a semiconducting state with narrow energy gap, making it suitable for optoelectronic devices. Need of eco-friendly sustainable processes concerning the elimination of hazardous materials bring and#947;-In2Se3 in the forefront of photovoltaic industry, due to its wide band gap as well as n-type conductivity. Thus, realizing the immense potential attributes of InBi1-xSbx, InBi1-xTex (x = 0-0.2) and and#947;-In2Se3 crystals, the present research was focussed on pioneering their growth and characterization.Horizontal directional solidification (HDS), being the versatile, inexpensive melt growth technique, was employed for obtaining InBi1-xSbx, and InBi1-xTex (x = 0-0.2) crystals. On the other hand, closed tube sublimation (CTS) was found to be most effective for deposition of and#947;-In2Se3 crystals. Platelet and spherulitic morphologies of and#947;-In2Se3 crystals have been grown by the vapor deposition for the first time, under different growth environments. Morphology, structure and quality of the as-grown crystals were studied, employing various scientific procedures such as X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Transport parameters, melting point and phase purity have been evaluated with the aid of Hall effect measurement, four probe set up, differential scanning calorimetry (DSC) and Raman spectroscopy. Vickers indentation testing was utilized for the evaluation of microhardness and deformation characteristics.
Pagination: A4
URI: http://hdl.handle.net/10603/149874
Appears in Departments:Department of Physics and Electronics

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02_certificate.pdf963.2 kBAdobe PDFView/Open
03_abstract.pdf74.06 kBAdobe PDFView/Open
04_declaration.pdf153.42 kBAdobe PDFView/Open
05_acknowledgement.pdf14.33 kBAdobe PDFView/Open
06_contents.pdf95.85 kBAdobe PDFView/Open
07_list_of_tables.pdf12.96 kBAdobe PDFView/Open
08_list_of_figures.pdf359.01 kBAdobe PDFView/Open
09_chapter1.pdf537.72 kBAdobe PDFView/Open
10_chapter2.pdf641.89 kBAdobe PDFView/Open
11_chapter3.pdf1.21 MBAdobe PDFView/Open
12_chapter4.pdf874.22 kBAdobe PDFView/Open
13_chapter5.pdf774.5 kBAdobe PDFView/Open
14_chapter6.pdf910.42 kBAdobe PDFView/Open
15_chapter7.pdf311.86 kBAdobe PDFView/Open
16_bibliography.pdf529.44 kBAdobe PDFView/Open


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